Found in 1990,Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of compound semiconductor material in China. In 2004,PAM-XIAMEN has developed SiC crystal growth technology and SiC wafer processing technology, established a production line to manufacturer SiC substrate of polytype 4H and 6H in different quality grades for researcher and industry manufacturers. In 2007,PAM-XIAMEN develops and manufactures compound semiconductor substrates-gallium arsenide crystal wafer and epitaxy. Our GaAs wafer include 2~6 inch ingot/wafers for LED,LD and Microelectronics applications.Thanks to its mastery of molecular beam epitaxy technology (MBE) and Metal Organic Chemical Vapor Deposition(MOCVD),the company can offer GaAs/InP epitaxial wafers for HEMT,pHEMT,HBT and other microwaves and RF applications. In 2009,PAM-XIAMEN has established the manufacturing technology for GaN epitaxy on Sapphire and freestanding GaN single crystal wafer substrate which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN wafer has low defect density and less or free macro defect density.