JT Microelectronics is a provider of innovative solutions for next-generation Gallium Nitride power devices. We offer advanced GaN power devices with a large portfolio of products, such as Driver ICs, GaN power switches, and GaN Schottky Diodes. JT Microelectronics was founded in 2020 by a team of experts in power electronics with different industrial and academic backgrounds. Our company is based on two sites, one in Shenzhen (China) and one in Biel (Switzerland), which is our core R&D center. This strategy enables us to take full advantage of the European cutting-edge technology and Shenzhen's great manufacturing capabilities. Our products have broad application prospects in consumer electronics, wireless charging, data center, 5G communications, lidar, and electric vehicles. We are power device experts, chip designers, packaging specialists, and management and marketing professionals. Our common goal, create a green and smarter future!