WIN Semiconductors Corp.founded in October 1999, was the first pure-play 6-inch GaAs foundry in the world, has established two advanced GaAs wafer fabs in recognition of the growing demand for low cost manufacturing of high speed and high quality GaAs MMIC's (monolithic microwave ICs) and RFIC's (radio frequency ICs). WIN provides dedicated foundry services to design houses as well as IDM partners. WIN supplies HBT and pHEMT MMIC fabrication services to worldwide IC manufacturers, using state-of-the-art GaAs process technology. WIN provides fast and low cost foundry services in broad range of applications from 5MHz to 130 GHz. The technologies including 1μm HBT, 2μm HBT, 0.5μm pHEMT Switch, 0.5μm power pHEMT, 0.25μm power pHEMT, 0.25μm E/D pHEMT, 0.15μm LNA pHEMT, 0.15μm power pHEMT, 0.1μm power pHEMT and BiFET pHEMT are in mass-production now. 1μm HBT is ideal for fiber communication systems. 2μm HBT and 0.5μm pHEMT Switch are ideal for handsets and WLAN applications. 0.1μm, 0.15μm, and 0.25μm pHEMT technologies are ideals for applications from discrete low noise/power FETs, SATOM, VSAT, base station, automotive radar, and 40Gb/s fiber optic MMICs. 0.5μm pHEMT is ideal for SATOM, GPS, Cable TV tuner, Electronic toll collection and WLAN.