ElFys, Inc. was founded in fall 2017 to commercialize induced junction black silicon photodiode technology invented by a group of university researchers. We manufacture highly sensitive photodiodes with external quantum efficiency (EQE) greater than 96% over a broad range of wavelengths (250 to 950 nm). The superior sensitivity is achieved with our patented technology utilizing induced junction and black silicon. This combination eliminates practically all electrical and optical losses resulting into nearly ideal photodiode response. We have individual photodiodes available with standard sizes e.g. 5x5 mm2 and 10 x 10 mm2. Upon request, we can also produce custom sizes and shapes as well as arrays and matrices of photodiodes, enabling a drop in replacement of your current photodiode.