EasyGaN is a startup providing epitaxy solutions for easy access to GaN-on-silicon technology. Located in Sophia Antipolis, EasyGaN is a CRHEA-CNRS spin-off, an internationally recognized Research Center with 20+ years of experience in the epitaxial growth of GaN. We develop advanced substrates for the GaN on Silicon semiconductor market using the Molecular Beam Epitaxy technique. Our first product is a very thin Aluminium Nitride (AlN) layer grown on top of a silicon wafer. This so-called ''AlN template'' is already available and is currently being tested by customers as a starting point for their GaN epitaxy. In addition, we are currently developing a GaN on Silicon epiwafer for the Radio Frequency 5G millimeter wave component market and plan to have prototypes in 2022.