SICC was founded in 2010 and it is a technological company focusing on R&D, production and sales of silicon carbide substrate materials. These products can be used in RF electronics for 5G, power electronics and other fields. At present, the main products include semi-insulating and n-Type SiC substrates from 100mm to 200mm diameter. After more than ten years of development, SICC has mastered the core technologies covering equipment design, thermal field design, SiC powder synthesis, crystal growth, and SiC wafering process.